产品参数:
Detailed parameters
- **Package:** TO252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -150V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2.9V
- **On-resistance (RDS(ON)):** 273mΩ @ VGS = 10V
- **Continuous leakage current (ID):** 10A
- **Technology:** Trench
领域和模块应用:
Application Examples
1. **Power Switch:**
VBE2153M is suitable for high voltage power switch applications. Its high withstand voltage and low on-resistance make it excellent in power management and power switching circuits, and can effectively control the switching state of high voltage power supplies.
2. **Reverse Protection Circuit:**
In applications where circuits need to be protected from reverse voltage damage, VBE2153M can be used as a reverse protection switch. Its negative drain-source voltage capability makes it suitable for protecting power supplies and loads from voltage reversal.
3. **Load Switch:**
In various load switch applications, such as motor control and battery management systems, VBE2153M is able to efficiently switch load states. Its high current capability and low on-resistance ensure the reliability and energy efficiency of load switch operation.
4. **High Voltage Power Conversion: **
VBE2153M is suitable for high voltage power conversion modules. Its high drain-source voltage and high current capability enable it to work effectively in power conversion applications, improving the reliability and performance of the overall system.
Overall, the VBE2153M MOSFET is a powerful P-channel component suitable for a variety of high voltage and high current applications, ensuring stable performance and efficient power management.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性