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VBPB165R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBPB165R11S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO3P and is suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 420
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO3P

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: VBPB165R11S is suitable for medium-power power switch modules, such as inverters, switching power supplies and motor controllers.
2. Solar inverter: This MOSFET can be used in the power switching circuit in a solar inverter to achieve conversion and stable output of solar energy.
3. Industrial drives: In the field of industrial automation, VBPB165R11S can be used in industrial drives and motor controllers to provide reliable power switching and current regulation.
4. High-voltage LED lighting: Due to its high voltage and current capabilities, this device can be used for current regulation and switching control in high-voltage LED lighting systems to provide stable lighting output.

The above areas and modules are just some examples of where the VBPB165R11S may be suitable, and the actual application depends on the specific circuit design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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