产品参数：
Detailed parameter description:
- Model: VBP165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 280m次
- Drain current (ID): 22A
- Technology: Flat process
-Package:TO247
领域和模块应用：
Examples of applicable fields and modules:
1. Industrial power module: Because VBP165R22 has high drain-source voltage and drain current, it is suitable for use in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charging piles: The product's low on-resistance and high withstand voltage characteristics make it an ideal choice for power electronic devices in electric vehicle charging piles.
3. Renewable energy converters: In renewable energy converters such as solar inverters and wind power controllers, VBP165R22 can achieve high-efficiency energy conversion.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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