产品参数:
**Parameter Description:**
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=4.5V: 6
- Drain-source resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): 97A
- Technology: Trench
-Package:TO220
领域和模块应用:
Here are some application examples:
1. Power inverter module: Since VBM1606S has high drain-source voltage and drain current capabilities, it is suitable for designing power inverter modules for industrial power systems, solar inverters, and wind power generation. system etc.
2. Motor drive module: This field effect transistor has good turn-on and turn-off characteristics and can be used to design motor drive modules, suitable for electric vehicles, power tools, industrial automation equipment and other fields.
3. Consumer electronics: Since VBM1606S has low on-resistance and high drain current capability, it can be used to design high-performance consumer electronics modules, such as power adapters, LED lighting drivers, etc.
4. Power switch module: This field effect transistor is suitable for designing various types of power switch modules. It can be used in power switches, DC-DC converters, AC-DC converters and other applications to provide efficient energy conversion and stable power output. .
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性