We know that MOSFETs are often paralleled for current sharing because of their stable current characteristics, and current sharing can be achieved through resistors when MOSFETs are in parallel.
When using MOSFETs for power amplification, multiple MOSFETs are often paralleled to increase the output power.
Parallel method: Connect the gate, source, and drain of multiple MOSFETs together to form a parallel circuit.
Analysis of parallel current sharing
In the design of MOSFET parallel current sharing circuits, the current load of each MOSFET needs to be equal to ensure that the current is evenly distributed among the transistors; the drive circuit of each MOSFET needs to be the same to ensure consistent operation.
This circuit design can improve the reliability and efficiency of the circuit.
Secondly, the resistance value of each MOSFET should also be equal. If one of the transistors has a smaller resistance value, it will carry more current, leading to overheating and failure of the transistor. Therefore, in the design of the circuit, we need to pay attention to selecting MOSFETs of the same model as much as possible.
Finally, pay special attention to the heat dissipation of MOSFETs. Each MOSFET will generate some heat while working, so they will all generate a certain amount of heat. If one MOSFET bears relatively more current, it will generate more heat, leading to long-term hidden dangers.
If the heat dissipation is poor, or the environmental conditions are not good, they may be damaged due to overheating. We can improve this by using heat sinks, fans, and other external conditions.
Of course, choosing high-quality MOSFETs is also very important. Here, we can recommend VBsemi's MOSFET products, which can be highly matched to various requirements in circuit design.
Advantages of VBsemi's MOSFETs in circuit design:
Fast switching speed, low driving power;
Small size, light weight, long service life;
Low noise, high input resistance, good thermal stability, strong anti-interference ability, and low power consumption.
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