With the increasing demand for environmental protection, energy conservation, and intelligence, the application of mid-low voltage MOSFETs in various fields is gradually expanding.

Mid-low voltage MOSFET power devices typically refer to MOSFET power devices with operating voltages between 10V and 300V. The structure of mid-low voltage MOSFET power devices usually includes trench gate VDMOS and shielded gate MOSFETs.

Compared to ordinary trench gate VDMOS, shielded gate MOSFET power devices have a more complex structure, requiring higher technical capabilities and manufacturing process levels. They have better conduction characteristics, lower switch losses, and higher power density.

As a professional semiconductor device manufacturer, VBsemi has launched a variety of mid-low voltage MOSFETs, which have advantages such as high input impedance, low noise, low distortion, and high signal gain, making them more suitable for mid-low voltage applications.

They are generally applied in the following common scenarios:

• Applications in switch power supplies

• Motor control applications

• New energy vehicle applications

• Smart home, LED lighting driver, etc.

Analysis of VBsemi's Mid-Low Voltage MOSFETs in Application Areas:

In the field of electric vehicles, VBsemi's mid-low voltage MOSFETs are widely used in battery management systems, motor controllers, and on-board chargers. With the popularization of electric vehicles and the increase in market share, the market prospects for mid-low voltage MOSFETs are also very broad.

In the field of smart homes and the Internet of Things, VBsemi's mid-low voltage MOSFETs are widely used in various smart devices and sensors, such as smart sockets, smart light bulbs, smart door locks, etc.

Additionally, the rapid development of emerging fields such as 5G communication, cloud computing, and big data has also had a positive impact on the market demand for mid-low voltage MOSFETs. These fields have very high requirements for semiconductor device performance and quality, and VBsemi's mid-low voltage MOSFETs, with their excellent performance and stability, have become the ideal choice for these fields.

VBsemi, as a professional semiconductor device manufacturer, has launched a variety of mid-low voltage MOSFETs. Two products, FDS4559-NL and AO4421, have attracted market attention.

FDS4559-NL (VBA5638) is an N+P-channel MOS transistor packaged in SOP8.

Its product parameters include:

• Maximum withstand voltage is ±60V, maximum drain current is 6.5A (forward) and -5A (reverse)

• At 10V, the drain-source resistance RDS(ON) is 28/51mΩ

• At 4.5V, the drain-source resistance RDS(ON) is 34/60mΩ

• Maximum gate-source voltage is ±20V, threshold voltage is ±1.9V

FDS4559-NL (VBA5638) has high power density and efficiency, suitable for various applications such as power switches and motor controllers. The product adopts advanced manufacturing technology, with excellent RDS(on) and RDS(off) characteristics, effectively reducing system power consumption and temperature.

AO4421 (VBA2658) is a P-channel MOS transistor packaged in SOP8.

Its product parameters include:

• Maximum withstand voltage is -60V, maximum drain current is -6A

• At 10V, the drain-source resistance RDS(ON) is 50mΩ and 61mΩ

• At 4.5V, the maximum gate-source voltage is ±20V, threshold voltage is -1.5V

AO4421 (VBA2658) has high speed, high precision, and low noise characteristics, suitable for various applications requiring high-speed switching, such as solar energy, electric vehicles, smart homes, etc. The product adopts VBsemi's unique manufacturing process, with excellent performance and reliability.

With the rapid development of emerging fields such as electric vehicles and solar energy, the market demand for mid-low voltage MOSFETs will continue to increase. VBsemi will continue to launch more MOSFET products with higher performance, lower power consumption, and smaller size to meet market demand.