Exciting News! VBsemi Introduces New MOSFET Products at electronica South China in Shenzhen!

VBsemi is proud to present several new MOSFET products at this year's electronica South China in Shenzhen, taking place from October 30 to November 1, 2023, at the Shenzhen International Convention and Exhibition Center (Bao'an New Hall). Visit VBsemi at booth 1D13 in Hall 1.

SiC MOSFET

Silicon Carbide (SiC) is a third-generation semiconductor material that offers advantages such as high voltage resistance, high frequency capability, and high-temperature tolerance compared to traditional Silicon (Si). SiC's breakdown voltage is 8-10 times higher than that of Si, allowing for greater current and voltage handling capabilities, leading to more compact product designs and improved efficiency. SiC MOSFETs are ideal for applications requiring high-temperature operation, high breakdown voltage, low losses, and fast switching speeds.

Applications: Mainly used in power electronics, including photovoltaics, new energy vehicles, charging stations, wind power, and rail transportation.

SJ MOSFET

Super Junction (SJ) MOSFETs are designed for high-voltage applications (600V-800V). The SJ structure reduces on-resistance while maintaining high breakdown voltage. This structure consists of multiple vertical PN junctions arranged in the D and S terminals. SJ MOSFETs offer low conduction losses, high current driving capability, low gate charge, low on-state voltage, fast switching speed, and 100% avalanche energy breakdown testing.

Applications: Suitable for motor drive systems, inverter systems, and power management systems.

IGBT

Insulated Gate Bipolar Transistor (IGBT) combines the input characteristics of a BJT with the output characteristics of a MOSFET. Compared to BJTs or MOSFETs, IGBTs offer higher power gain, higher operating voltage, and lower MOSFET input losses. IGBTs are primarily used in high-voltage applications (600V-1700V) and consist of a PN junction added to the MOSFET structure to achieve high-voltage and high-current control.

Applications: Ideal for motor drive systems, inverter systems, and power management systems in electric vehicles, rail transportation, and industrial control.

SGT MOSFET

Shielded Gate Trench (SGT) MOSFET is a new type of power semiconductor device that reduces parasitic capacitance and on-resistance, improving chip performance and reducing chip area. This technology changes the internal electric field of the MOSFET, reducing the thickness of the EPI layer and lowering the on-resistance Rds(on). SGT MOSFETs have lower Miller capacitance, gate charge, and switching losses compared to traditional trench MOSFETs, leading to faster switching speeds and lower switching losses.

Applications: Suitable for motor drive systems, inverters, and power management systems in electric vehicles, photovoltaic power generation, and energy-saving appliances.

At the exhibition, visitors will have the opportunity to interact with VBsemi's technical experts and learn more about the newly launched MOSFET products and technologies. As a national high-tech enterprise, VBsemi is committed to advancing semiconductor device technology and providing innovative solutions to customers. VBsemi's products are reliable, stable, and widely used in power supplies, motor control, lighting, and other fields.

We sincerely invite new and old customers to visit VBsemi's booth at electronica South China 2023. This is an excellent opportunity to learn about the latest semiconductor device technology and trends. We look forward to your visit and discussing the future development of the semiconductor device field with you.

electronica South China 2023 Date: October 30 - November 1, 2023 Venue: Shenzhen International Convention and Exhibition Center (Bao'an New Hall) Organizer: Messe München Shanghai Co., Ltd. VBsemi Booth: Hall 1-1D13