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VBF2317 产品详细

产品简介:

Product Overview: VBF2317

VBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain-source voltage (V_DS) of -30V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is -1.8V, with a low on-resistance (R_DS(on)) of 24mΩ @ V_GS = 4.5V and an even lower on-resistance (R_DS(on)) of 18mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of -40A. Using Trench technology, VBF2317 provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.

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产品参数:

Detailed parameter description

- **Drain-Source Voltage (V_DS):** -30V
- The maximum negative voltage that can be applied between the drain and source.

- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage that can be applied between the gate and source.

- **Threshold Voltage (V_th):** -1.8V
- The minimum gate-source voltage required to turn on the MOSFET.

- **On-Resistance (R_DS(on)):** 24mΩ @ V_GS = 4.5V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.

- **On-resistance (R_DS(on)):** 18mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.

- **Continuous drain current (I_D):** -40A
- The maximum continuous negative current that can flow through the drain terminal when the device is properly heatsinked.

- **Package type:** TO251
- The physical package of the MOSFET, which provides good heat dissipation and structural stability.

- **Configuration:** Unipolar P-channel
- Indicates that the MOSFET has a single P-channel for conducting electricity.

- **Trench technology:**
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.

领域和模块应用:

Application Examples

**1. Power Management Systems:**
- The VBF2317 MOSFET can be used for high current switching in power management systems, especially for applications that need to handle negative voltages. Its low on-resistance ensures high efficiency and low power losses, making it suitable for use in power distribution and protection circuits.

**2. Motor Drives:**
- In motor drive applications, the VBF2317 can be used to control the negative current path of the motor, making it suitable for high power drive systems such as power tools and electric vehicles. Its high current handling capability and low on-resistance make it an excellent performer in these applications.

**3. Inverters:**
- In inverter applications, especially for solar and wind inverters, the VBF2317 can be used as a switching element to handle negative voltages and ensure efficient energy conversion and power conditioning.

**4. Load Switches:**
- This MOSFET is suitable for load switching applications, such as controlling the switching of high current loads in load protection circuits. Its low R_DS(on) ensures efficient performance and reliability under high load conditions.

**5. Battery Management System:**
- In battery management systems, VBF2317 can be used to control the charging and discharging paths of the battery, especially when handling negative voltages. Its high current and low on-resistance characteristics ensure stability and efficiency of the battery management system.

By applying the VBF2317 MOSFET to these areas, designers can achieve efficient and reliable performance to meet the requirements of high current and negative voltage handling.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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