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VBE1305 产品详细

产品简介:

VBE1305 MOSFET Product Introduction

VBE1305 is a high-performance N-channel MOSFET designed for high current and high switching efficiency applications. It uses a TO-252 package with a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is 1.83V, the on-state resistance (R_DS(ON)) is 4 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 85A. VBE1305 uses trench technology to provide excellent switching performance and high current handling capability, suitable for a variety of high-power and high-efficiency application scenarios.

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产品参数:

Detailed parameter description

1. **Package**: TO-252
- Provides efficient heat dissipation performance and a small footprint, suitable for high-power and high-density circuit design.

2. **Configuration**: Single N-channel
- Simplifies circuit design and improves integration, suitable for switch control in various applications.

3. **V_DS (drain-source voltage)**: 30V
- Suitable for low to medium voltage applications, meeting high-voltage switch requirements.

4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive to adapt to different control voltage requirements.

5. **V_th (threshold voltage)**: 1.83V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation under low voltage control.

6. **R_DS(ON)**: 4 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.

7. **I_D (Continuous Drain Current)**: 85A
- High current handling capability, suitable for applications requiring high current.

8. **Technology**: Trench
- Provides efficient switching performance and low on-resistance, improving overall performance.

领域和模块应用:

Application Examples

**1. Power Management: **
- **Field**: Computer Power Supply
- **Example**: In a high-efficiency switch mode power supply (SMPS), VBE1305 can handle power modules with high current output. Its low on-state resistance and high current carrying capacity make it perform well in power factor correction (PFC) circuits, helping to improve the stability and efficiency of the power supply.

**2. Motor Drive: **
- **Field**: Industrial Automation
- **Example**: Applied to motor drive circuits, VBE1305 can provide efficient switching control and is suitable for motor loads that require large current. Its high current carrying capacity ensures smooth operation of the motor and is suitable for motor control applications in industrial automation.

**3. High-power LED Drive: **
- **Field**: Lighting System
- **Example**: In a high-power LED drive circuit, VBE1305 can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of LEDs, making it suitable for LED lighting systems that require high power output.

**4. Battery Management: **
- **Field**: Electric Vehicles (EV)
- **Example**: In the battery management system of electric vehicles, VBE1305 can effectively handle the charge and discharge control of the battery. Its high current carrying capacity and high efficiency make it an ideal choice for battery management systems, helping to improve the energy efficiency and range of electric vehicles.

**5. Power Protection: **
- **Field**: Communication Equipment
- **Example**: Used in power protection circuits to protect communication equipment from overcurrent and short circuit damage. The high current handling capability and low on-resistance of VBE1305 provide effective protection functions to ensure the stable operation of communication systems.

The VBE1305 MOSFET is a high-efficiency, high-current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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