产品参数:
Detailed parameter description
- **Package**: DIP8
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(on))**:
- 1200mΩ @ VGS = 4.5V
- 1000mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 0.6A
- **Technology**: Trench technology
领域和模块应用:
Application fields and module examples
The design features of **VBGC1201K** make it suitable for a number of specific application fields, including:
1. **High voltage switch**: The 200V maximum drain-source voltage of this MOSFET makes it particularly suitable for switching applications that require high voltage processing. It can be used as a switching element in high voltage protection circuits, such as a protection switch for high voltage power supplies, to ensure the safety of the system under abnormal conditions.
2. **Low power supply management**: In high voltage but low current power management systems, such as low power power modules and linear regulators, this MOSFET can provide appropriate switching functions. Although its on-resistance is high, it can still work effectively in applications with low current.
3. **Signal switch**: In high voltage signal processing applications, such as high voltage test equipment and signal switching circuits, VBGC1201K can stably switch high voltage signals to meet the needs of high voltage environments.
4. **Industrial Control**: In some industrial control applications, such as high voltage sensor interfaces or voltage protection circuits, the high voltage capability of this MOSFET can provide reliable control and protection to ensure safe and reliable operation of industrial equipment.
5. **Automotive Electronics**: Although its current capability is limited, its high voltage handling capability makes it suitable for high voltage protection circuits in automotive electronic systems to ensure the stability and safety of automotive electrical systems under high voltage conditions.
In summary, the VBGC1201K is a MOSFET with high voltage tolerance and high on-resistance, suitable for high voltage switching and low power power management applications. It is particularly suitable for scenarios that require operation under high voltage conditions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性