产品参数:
Detailed parameter description
- **Package**: DFN8 (3x2)-B
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±8V
- **Gate-source threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 125mΩ (at VGS = 4.5V)
- 90mΩ (at VGS = 10V)
- **Maximum leakage current (ID)**: -4A
- **Technology**: Trench technology
领域和模块应用:
Applications and Module Examples
The low on-resistance and medium current handling capability of the **VBBD4290A** enable it to excel in a number of areas and modules, including:
1. **Power Management**:
- **Battery Management System**: In portable devices and battery-powered systems, the VBBD4290A can be used as a switching element in the battery management system, where its low on-resistance helps improve energy efficiency and extend battery life.
2. **Consumer Electronics**:
- **Power Switch**: In consumer electronics such as smartphones and tablets, the VBBD4290A is suitable for power switching and power path management, providing high-efficiency and low-power solutions.
3. **Portable Devices**:
- **Load Switch**: In portable devices, this MOSFET can be used to control the load switch of the power supply, ensuring reliable operation of the device and optimizing power management.
4. **Industrial Control**:
- **Low Voltage Switch**: In industrial control systems, the low voltage characteristics of MOSFETs make them suitable for low voltage switching tasks, such as sensor interfaces and control circuits.
5. **Power Tools**:
- **Power Control**: In power tools, VBBD4290A can be used in power control circuits to provide efficient current management and stable operating performance.
These application examples demonstrate the superior performance and diverse applications of VBBD4290A, especially for low voltage electronic systems that require high performance, low on-resistance and medium current handling capabilities.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性