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VBBD5222 产品详细

产品简介:

VBBD5222 Product Introduction

**Product Name**: VBBD5222

**Package**: DFN8(3x2)-B

**Configuration**: Bipolar N-channel and P-channel MOSFET (Dual-N+P)

The VBBD5222 is a bipolar N-channel and P-channel MOSFET combination device in a DFN8(3x2)-B package, designed for a ±20V voltage range and ±8V gate-source voltage. The device uses Trench technology, has low on-resistance and excellent switching performance, and is suitable for a variety of applications requiring a dual MOSFET configuration.

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产品参数:

Detailed parameter description

- **V_DS (drain-source voltage)**: ±20V
The maximum voltage that the MOSFET drain and source can withstand, positive and negative voltage range.

- **V_GS (gate-source voltage)**: ±8V
The maximum voltage allowed between the MOSFET gate and source.

- **V_th (gate threshold voltage)**:
- N-channel: 0.8V
- P-channel: -0.8V
The minimum gate-source voltage required to make the MOSFET start to conduct. N-channel and P-channel MOSFETs have different threshold voltages.

- **R_DS(ON)(Drain-Source On Resistance)**:
- N-channel:
- 36mΩ @ V_GS = 4.5V
- 32mΩ @ V_GS = 10V
- P-channel:
- 97mΩ @ V_GS = 4.5V
- 69mΩ @ V_GS = 10V
The resistance between the drain and source of the MOSFET in the on state. Lower R_DS(ON) values indicate higher switching efficiency and lower power losses.

- **I_D(Continuous Drain Current)**:
- N-channel: 5.9A
- P-channel: -4.1A
The maximum continuous drain current that the MOSFET can withstand. N-channel and P-channel MOSFETs have different current handling capabilities.

- **Technology**: Trench
Using Trench technology, providing low on-resistance and good current handling capability.

领域和模块应用:

Applications

The VBBD5222 MOSFET is suitable for a variety of application scenarios that require a dual MOSFET configuration, especially in environments that require positive and negative voltage operation and efficient switching performance:

1. **Power Management**:
- **DC-DC Converter**: As a switching element, it is suitable for efficient power conversion in DC-DC converters, especially in applications that require positive and negative voltage conversion.
- **Power Switch**: Used in various power management applications, especially in the case of positive and negative voltage inputs, such as bipolar power systems.

2. **Motor Control**:
- **H-Bridge Circuit**: In the H-bridge circuit of the motor drive, it provides positive and negative current handling capabilities to achieve forward and reverse control of the motor.
- **Stepper Motor Drive**: In the stepper motor drive system, it supports precise current control and direction control.

3. **Automotive Application**:
- **Power Distribution**: Handles positive and negative voltage loads in the automotive power distribution system to ensure the reliability and efficiency of the power system.
- **Battery Management System (BMS)**: Battery management applications that handle bipolar voltages in electric and hybrid vehicles to improve system performance and safety.

4. **Consumer Electronics**:
- **Power Management Module**: Power management modules in various consumer electronics products provide efficient and reliable switching and current control.
- **Battery-Powered Devices**: In portable devices using positive and negative voltages, dual MOSFET configurations are provided to support complex power requirements.

With its dual MOSFET configuration and low on-resistance, the VBBD5222 is suitable for a variety of application scenarios that require positive and negative voltage operation and efficient switching, ensuring the efficiency and reliability of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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