产品参数:
Detailed parameter description
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(on))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 90A
- **Technology**: Trench technology
领域和模块应用:
Application fields and module examples
The high performance characteristics of **VBED1806** make it very suitable for the following high-power and high-efficiency applications:
1. **Power management**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for high-efficiency power management systems such as DC-DC converters and power modules. In these applications, it can handle high-current switching operations, improve power conversion efficiency, and reduce energy losses.
2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, this MOSFET can handle high-current switching to ensure the efficiency and stability of the system. Its small package also makes it suitable for electric vehicle electronic systems with limited space.
3. **Inverter system**: In high-power inverter systems, such as solar photovoltaic inverters and industrial inverters, this MOSFET can effectively handle high voltage and high current switching operations, provide efficient power conversion, and ensure reliable operation of the system.
4. **Consumer electronics**: In power management modules of consumer electronics such as smartphones, tablets and laptops, the compact package and high efficiency of this MOSFET make it suitable for high-power power switching and protection circuits, helping to improve product stability and energy efficiency.
5. **High-power switching**: In switching applications that need to handle high current and high power, such as power switching equipment and power electronic systems, this MOSFET can provide reliable switching performance and efficient current control.
In summary, VBED1806 is a MOSFET with high current carrying capacity and low on-resistance, suitable for various high-power power management and switching applications, especially in electronic devices with limited space.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性