**TSM2313CX-RF-VB detailed parameter description and application introduction: **

**Brand: ** VBsemi

**Silkscreen: ** VB2290

**Parameters: **
- **Package: ** SOT23
- **Channel type: ** P-Channel
- **Maximum drain-source voltage (VDS): ** -20V
- **Maximum drain current (ID): ** -4A
- **On-state resistance (RDS(ON)): ** 57mΩ @ VGS=4.5V, VGS=12V
- **Threshold voltage (Vth): ** -0.81V

**Application introduction: **
TSM2313CX-RF-VB is a P-Channel field effect transistor suitable for a variety of application scenarios. Its performance parameters make it widely used in the following fields and modules:

1. **Power management module:** Due to its P-Channel nature and low on-state resistance, it can be used in power management modules to provide efficient power switching and control.

2. **Current control module:** Suitable for current control circuits such as current sources and current control switches, and can provide reliable performance.

3. **Signal switch:** With low threshold voltage, it is suitable for signal switching circuits, providing reliable solutions for various signal processing applications.

4. **Portable devices:** The small SOT23 package design makes it particularly suitable for portable devices such as smartphones, tablets, etc., providing efficient power management for these devices.

In summary, TSM2313CX-RF-VB is a versatile P-Channel MOSFET. Its performance and package design make it suitable for a variety of electronic fields, from power management to signal switching, and can provide reliable performance.