**TSM2301ACX-RF-VB Detailed parameter description: **

- **Silkscreen: **VB2290
- **Brand: **VBsemi
- **Package: **SOT23
- **Channel type: **P—Channel
- **Maximum withstand voltage: **-20V
- **Maximum drain current: **-4A
- **On-resistance: **RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V
- **Threshold voltage: **Vth = -0.81V

**Application introduction: **

TSM2301ACX-RF-VB is a P-Channel MOSFET, specially designed for wireless radio frequency (RF) applications. Based on low on-resistance, high drain current and responsible voltage, it has special optimization to adapt to the RF environment, making it perform well in the RF field.

**Example:**

1. **RF power amplifier module:** TSM2301ACX-RF-VB can be used in RF power amplifier module to amplify RF signal by controlling charge channel.

2. **RF switch module:** In applications where RF signal switching is required, TSM2301ACX-RF-VB can be used as RF switch to switch RF signal.

3. **RF modulation module:** Due to its optimized RF characteristics, TSM2301ACX-RF-VB is suitable for RF modulation module to ensure efficient performance in RF environment.

4. **Communication equipment:** Due to the small design of SOT23 package, TSM2301ACX-RF-VB can be widely used in various communication equipment, such as RF module, communication terminal, etc.

These examples illustrate the suitability of the TSM2301ACX-RF-VB for RF applications, where its features make it an ideal choice in these modules.