VBsemi SSM3J327F-VB

**Detailed parameter description:**
- Type: P-Channel trench MOSFET
- Maximum withstand voltage: -20V
- Maximum current: -4A
- RDS(ON): 57mΩ @ VGS=4.5V, VGS=12V
- Threshold voltage (Vth): -0.81V
- Package: SOT23

**Application introduction:**
Applicable to circuits and modules that require P-Channel trench MOSFET, especially in situations where low impedance and high current are required.

**Example application:**
1. **Power management module:** Used for power switching, reverse protection, etc.
2. **Driver module:** Widely used in motor drive and power amplifier circuits.
3. **LED driver module:** Control LED brightness and current.

**Application areas:**
1. **Consumer electronics:** Handheld devices, chargers.
2. **Automotive electronics:** Vehicle power management, lighting control.
3. **Industrial control:** Motor control, switching power supply.
4. **Communication equipment:** Amplifier, RF power amplifier.

**Note:** In the design, please make sure to meet the power consumption, temperature and current requirements of the circuit.