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SSM3J317T-VB is a SOT23 packaged MOS tube Datasheet parameter video explanation
VBsemi SSM3J317T-VB product detailed parameters and application introduction:

**Parameter description: **
- Silk screen: VB2290
- Brand: VBsemi
- Package: SOT23
- Channel type: P-Channel
- Maximum operating voltage: -20V
- Maximum drain current: -4A
- Static drain-source resistance: RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V
- Gate-source threshold voltage: Vth = -0.81V

**Application introduction: **
SSM3J317T-VB is a P-Channel SOT23 package field effect transistor. It has the characteristics of low leakage current, low on-resistance, etc., and is suitable for a variety of power control and switching applications.

**Typical application areas and module examples:**
1. **Power management module:** Due to its low leakage current and low on-resistance, SSM3J317T-VB can be widely used in power management modules, such as switching power supplies, battery management systems, etc.

2. **Current control module:** In scenarios where precise current control is required, this device can be used as a key component, such as current source, current control circuit, etc.

3. **Signal switch module:** Due to its P-Channel channel characteristics, it is suitable for modules that require efficient signal switching, such as signal selectors, audio switches, etc.

Overall, SSM3J317T-VB plays an important role in power management, current control, and signal switching, providing reliable performance for these modules.

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