SSM3J13T-VB is a P-Channel field effect transistor of VBsemi brand, using SOT23 package. Parameters include operating voltage -20V, current -4A, on-resistance RDS(ON)=57mΩ (at VGS=4.5V and VGS=12V), threshold voltage Vth=-0.81V. Suitable for SOT23 package.

**Detailed parameter description:**
- Operating voltage: -20V
- Current: -4A
- On-resistance: 57mΩ (at VGS=4.5V and VGS=12V)
- Threshold voltage: -0.81V
- Package: SOT23

**Application introduction:**
SSM3J13T-VB is suitable for occasions requiring low voltage drop and high efficiency, especially in portable devices and power management modules. Its low on-resistance and high threshold voltage make it widely used in power switching circuits, voltage regulators and power inverters.

**Example application areas:**
1. **Portable device charging management:** Due to its low on-resistance, the SSM3J13T-VB can be used in battery charging management modules of portable electronic devices to improve efficiency and extend battery life.

2. **Voltage regulator module:** In low voltage drop applications, the SSM3J13T-VB can be used in voltage regulator modules to ensure stable output voltage.

3. **Power inverter:** Suitable for lightweight inverter modules such as solar inverters to achieve efficient energy conversion.

Overall, the characteristics of the SSM3J13T-VB make it widely used in the field of power management and control of various low-power and miniaturized electronic devices.