SI2392DS-T1-GE3-VB is a VBsemi brand N-Channel trench field effect transistor, using SOT23 package. The following are detailed parameter descriptions and application profiles:

- Voltage (Vds): 100V
- Current (Id): 4.3A
- On-resistance (RDS(ON)): 120mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): 1.2~2.8V

Application profile:
SI2392DS-T1-GE3-VB is suitable for various electronic devices and modules, especially in scenarios where N-Channel trench field effect transistors are required. Due to its performance characteristics, it can be widely used in the following fields:

1. **Power management module:** Due to its high voltage and current handling capabilities, SI2392DS-T1-GE3-VB is very suitable for use in power management modules to achieve efficient power control and management.

2. **Power inverter:** In the power inverter, SI2392DS-T1-GE3-VB can be used to control the current and voltage in the power inverter process to improve the inverter efficiency.

3. **Current control module:** Due to its low on-resistance and adjustable threshold voltage, SI2392DS-T1-GE3-VB can be used in the current control module to achieve precise control of the current.

4. **LED driver:** In the field of LED lighting, SI2392DS-T1-GE3-VB can be used in the LED driver module to achieve efficient control and dimming of LEDs.

5. **Battery protection module:** Due to its high voltage characteristics, SI2392DS-T1-GE3-VB is suitable for battery protection module to ensure the safe operation of the battery under different working conditions.

Overall, SI2392DS-T1-GE3-VB can play an important role in various electronic modules that require N-Channel field-effect transistors and improve the performance and efficiency of the system.