Product model: SI2321DS-T1-GE3-VB

- Silk screen: VB2290
- Brand: VBsemi
- Parameters:
- Package: SOT23
- Channel type: P—Channel
- Maximum operating voltage: -20V
- Maximum current: -4A
- RDS(ON): 57mΩ@VGS=4.5V, VGS=12V
- Threshold voltage (Vth): -0.81V

Detailed parameter description and application introduction:

SI2321DS-T1-GE3-VB is a P-Channel SOT23 package field effect transistor. It has the characteristics of maximum operating voltage of -20V, maximum current of -4A, RDS(ON) of 57mΩ@VGS=4.5V, VGS=12V. Its threshold voltage is -0.81V.

**Application fields and module examples:**

1. **Power management module:** Due to its P-Channel channel characteristics and moderate current capacity, SI2321DS-T1-GE3-VB can be widely used in power management modules for battery protection, power switch and other functions.

2. **Current control module:** Suitable for modules that require precise control of current, such as motor drive modules, LED drive modules, etc.

3. **Signal amplifier:** Can be used as a key component of a signal amplifier to amplify weak signals, such as in sensor interface circuits.

Overall, SI2321DS-T1-GE3-VB has broad application potential in scenarios where P-Channel field-effect transistors are required, such as power management, current control and other modules.