Model: SI2308ADS-T1-GE3-VB
Silkscreen: VB1695
Brand: VBsemi
Package: SOT23

**Detailed parameter description:**
- Type: N-channel MOSFET
- Rated voltage (V_DS): 60V
- Rated current (I_D): 4A
- Static drain-source resistance (R_DS(ON)): 85mΩ @ V_GS = 10V, V_GS = 20V
- Threshold voltage (V_th): 1~3V

**Application Introduction:**
SI2308ADS-T1-GE3-VB is an N-channel MOSFET suitable for a variety of power supply and power management applications. Its high rated voltage, high current carrying capacity and low static drain-source resistance make it an ideal choice for electronic device design.

**Application fields and module examples: **
1. **Power module: **Since SI2308ADS-T1-GE3-VB has high rated voltage and current carrying capacity, it is suitable for the design of power modules, such as switching power supplies, DC-DC converters, etc.

2. **Motor drive: **In applications where motor control is required, SI2308ADS-T1-GE3-VB can be used as a power switching element in motor drive circuits.

3. **LED lighting: **Suitable for LED lighting drive circuits to help achieve efficient power conversion and brightness control.

4. **Battery management system: **In systems that need to manage battery charging and discharging, SI2308ADS-T1-GE3-VB can be used in battery protection circuits to achieve efficient battery management.

5. **Industrial Automation:** Used in power switching circuits in industrial automation equipment to provide reliable power control.

Overall, SI2308ADS-T1-GE3-VB is suitable for a variety of application scenarios that require high-performance MOSFETs, especially in areas that require high voltage and current, and can provide reliable power switching functions for the system.