MTE100N10KRN3-VB Silkscreen: VB1101M Brand: VBsemi Parameters: SOT23; N—Channel, 100V; 4.3A; RDS(ON)=120mΩ@VGS=10V, VGS=20V; Vth=1.2~2.8V Package: SOT23

Detailed parameter description:
- Model: MTE100N10KRN3-VB
- Silkscreen: VB1101M
- Brand: VBsemi
- Parameters:
- Package type: SOT23
- Channel type: N—Channel
- Rated voltage: 100V
- Rated current: 4.3A
- On resistance: 120mΩ @ VGS=10V, VGS=20V
- Threshold voltage: 1.2~2.8V

Application introduction:
MTE100N10KRN3-VB is an N-Channel field effect transistor suitable for SOT23 package. Its characteristics include high load voltage and large current, suitable for a variety of circuit and module applications. Due to its high rated voltage and low threshold voltage, this device is often used in electronic devices that require high performance and high reliability, such as power inverters, switching power supplies, motor drives, etc.

Example:
MTE100N10KRN3-VB can be widely used in power inverters, industrial motor drives, power management modules and other fields. In power electronic modules, it can be used to design high-performance, high-efficiency power supply systems, as well as other applications that require stable and reliable current switching control.