Product model: MEM2301XG-VB

Silk screen: VB2290

Brand: VBsemi

**Detailed parameter description:**

- Package type: SOT23
- Channel type: P—Channel
- Maximum operating voltage: -20V
- Maximum continuous drain current: -4A
- Drain-source resistance (RDS(ON)): 57mΩ @ VGS=4.5V, VGS=12V
- Threshold voltage (Vth): -0.81V

**Application introduction:**

MEM2301XG-VB is a P-Channel trench MOSFET, widely used in various electronic fields and modules. The following are examples of areas where this product may be applicable and corresponding modules:

1. **Power management module:** Due to its P-Channel MOSFET characteristics, MEM2301XG-VB can be used in power management modules such as power switches, current control, etc. to ensure efficient power conversion and stable power output.

2. **Signal amplifier and modulator:** Suitable for applications that require signal amplification or modulation, such as RF modules in communication equipment.

3. **Portable electronic devices:** The SOT23 package of MEM2301XG-VB is suitable for small and lightweight electronic devices such as smart watches, portable audio devices, etc. to achieve low power consumption and high efficiency design.

4. **Battery management system:** In systems that require effective battery management, MEM2301XG-VB can be used for battery charge and discharge control to extend battery life.

The above are just some examples. Specific application areas and module selection should be evaluated and tested in detail according to product performance characteristics and system requirements. In the design, it is recommended to conduct in-depth technical evaluation according to specific application scenarios and requirements.