Product model: KDV-VB

Silk screen: VB2290

Brand: VBsemi

**Detailed parameter description:**

- Package type: SOT23
- Channel type: P—Channel
- Maximum operating voltage: -20V
- Maximum continuous drain current: -4A
- Drain-source resistance (RDS(ON)): 57mΩ @ VGS=4.5V, VGS=12V
- Threshold voltage (Vth): -0.81V

**Application introduction:**

KDV-VB is a P-Channel trench MOSFET, widely used in various electronic fields and modules. The following are examples of areas where this product may be applicable and corresponding modules:

1. **Low-power electronic devices:** Due to its low drain current and low power consumption, KDV-VB is suitable for portable electronic devices that focus on energy efficiency and battery life, such as smart watches, portable audio devices, etc.

2. **Power management module:** As a P-Channel MOSFET, KDV-VB can be used for power switching and current control in power management modules to ensure efficient power conversion and stable power output.

3. **Signal amplifier and modulator:** Due to its SOT23 package type, it is suitable for applications that require signal amplification or modulation in limited space, such as RF modules in communication equipment.

4. **Wearable devices:** In wearable devices that require small and lightweight, KDV-VB can be used to control current, switch power, and other power optimization applications.

The above are just some examples. The specific application areas and module selection depend on the performance characteristics of the product and system requirements. During design, it is recommended to conduct detailed evaluation and testing based on specific application scenarios and requirements.