**VBsemi J461A-T1B-AT-VB MOSFET**

**Detailed parameter description:**
- Brand: VBsemi
- Product model: J461A-T1B-AT-VB
- Package: SOT23
- Polarity: P-Channel
- Maximum drain voltage (VDS): -60V
- Maximum drain current (ID): -0.5A
- On-resistance (RDS(ON)): 3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1.87V

**Application introduction:**
J461A-T1B-AT-VB is a P-Channel type MOSFET, which is widely used in a variety of circuit designs and application scenarios. Its low drain resistance and moderate drain current make it perform well in different fields.

**Application fields and module examples:**
1. **Power switch module:** Due to the P-Channel characteristics of J461A-T1B-AT-VB, it can be used for power switch control to improve the efficiency and reliability of the power module.

2. **Amplifier front end:** In amplifier circuits such as audio amplifiers, J461A-T1B-AT-VB can be used as a shutdown switch to help achieve precise control of signals.

3. **Current source:** Applicable to current control circuits that require P-Channel MOSFET, such as current source circuits.

4. **Inverter and switching power supply:** Can be used in inverters and switching power supplies to assist in the conversion and management of electrical energy.

Please select the appropriate application field and module according to the specific circuit design requirements and parameter matching.