**HM2N10MR-VB Detailed parameter description: **

- **Brand: **VBsemi
- **Model: **HM2N10MR-VB
- **Silkscreen: **VB1102M
- **Package: **SOT23
- **Channel type: **N-Channel
- **Maximum voltage: **100V
- **Maximum current: **2A
- **On-resistance (RDS(ON)): **246mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth): **2V

**Application introduction: **

HM2N10MR-VB is an N-Channel trench MOSFET designed for high voltage and high current applications. Its SOT23 package is suitable for circuit board designs with space constraints. With low on-resistance and high performance, it is suitable for applications requiring efficient and reliable power supply and current control.

**Application fields and module examples: **

1. **Power switch module: ** Due to its high voltage and current characteristics, HM2N10MR-VB is suitable for power switch modules to ensure stable operation under high voltage conditions.

2. **Electric vehicle motor control module: ** In electric vehicle motor control modules, HM2N10MR-VB can be used as a key component to ensure efficient and reliable operation of motor drive modules.

3. **Power inverter: ** It is suitable for power inverters. By controlling the power supply, it realizes the conversion from DC to AC and can be used in fields such as solar inverters.

4. **High-performance LED driver module: ** In applications requiring high-performance LED driving, HM2N10MR-VB can be used as a key component of LED driver modules to ensure stable current control.

Overall, HM2N10MR-VB is suitable for high voltage and high current scenarios, and is widely used in module design in fields such as power switches, electric vehicle motor control, power inverters and LED drivers.