**GV2301A-VB Detailed parameter description:**

- **Silkscreen:** VB2290
- **Brand:** VBsemi
- **Package:** SOT23
- **Channel type:** P—Channel
- **Maximum withstand voltage:** -20V
- **Maximum drain current:** -4A
- **On-resistance:** RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V
- **Threshold voltage:** Vth = -0.81V

**Application introduction:**

GV2301A-VB is a P-Channel MOSFET suitable for high-efficiency power switching and power control applications. Its low on-resistance, high drain current and responsible voltage make it widely used in power management, battery management, DC-DC converters and other fields.

**Examples:**

1. **Power switch module:** GV2301A-VB can be used in power switch module to achieve efficient switching and power modulation of power supply by controlling the charge channel.

2. **Battery management module:** In battery charging and discharging management, GV2301A-VB can be used as a charge switch to effectively control the battery charging and discharging process.

3. **DC-DC converter:** Due to its low on-resistance and high drain current characteristics, GV2301A-VB is suitable for building high-efficiency DC-DC converters.

4. **Portable electronic devices:** Due to the small design of SOT23 package, GV2301A-VB can be widely used in portable electronic devices such as smart phones, tablets, etc.

These examples illustrate the suitability of the GV2301A-VB in areas such as power management, battery management and DC-DC conversion, where its features make it an ideal choice in these modules.