**Product model:** 2SJ461-T2B-A-VB

**Silk screen:** VB264K

**Brand:** VBsemi

**Parameters:**
- Package type: SOT23
- Channel type: P—Channel
- Rated voltage: -60V
- Rated current: -0.5A
- On-state resistance (RDS(ON)): 3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1.87V

**Package:**
- SOT23

**Detailed parameter description and application introduction:**

2SJ461-T2B-A-VB is a P—Channel field effect transistor in SOT23 package. The following are detailed parameter descriptions and application profiles:

- **Channel type: ** P-Channel, suitable for circuit designs that require P-type field effect transistors.

- **Rated voltage: ** -60V, suitable for applications that handle lower voltage ranges in the circuit.

- **Rated current: ** -0.5A, suitable for electronic devices with low current requirements.

- **On-state resistance: ** RDS(ON)=3000mΩ @ VGS=10V, VGS=20V, with lower on-resistance, helps reduce power consumption.

- **Threshold voltage: ** Vth=-1.87V, provides reliable gating characteristics.

**Examples of applicable fields and modules:**

This product is suitable for various electronic devices and circuit designs that require P-Channel field effect transistors, such as:

1. **Power management module:** Because it is suitable for lower voltage ranges, it can be used in power management modules to help achieve effective power control.

2. **Signal amplifier:** In some signal amplifier circuits, P-Channel field effect transistors can be used for specific signal processing requirements.

3. **Low-power devices:** Due to its low power consumption characteristics, it can be used in electronic devices that need to reduce power consumption.

Please note that the specific application needs to select the appropriate field effect transistor according to the circuit design and requirements.