**Product model:** 2SJ343-VB

**Silk screen:** VB264K

**Brand:** VBsemi

**Parameters:**
- Package: SOT23
- Channel type: P—Channel
- Maximum drain voltage (VDS): -60V
- Maximum drain current (ID): -0.5A
- On resistance (RDS(ON)): 3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1.87V

**Application introduction:**
2SJ343-VB is a P—Channel field effect transistor in SOT23 package. Its main features include a maximum drain voltage of -60V, a maximum drain current of -0.5A, and low on-resistance (RDS(ON)). This product is suitable for circuits and modules that require load switches.

**Applicable fields and example applications: **
1. **Power management module: ** Due to the low on-resistance and P-Channel characteristics of the 2SJ343-VB, it can be used as a power switch in the power management module to improve the efficiency of the overall circuit.

2. **Battery protection circuit: ** In applications where the battery needs to be protected from over-discharge, the 2SJ343-VB can be used as a key component in the battery protection circuit to ensure the safe use of the battery.

3. **Low-power electronic devices: ** Due to its low threshold voltage and low leakage current characteristics, it is suitable for some low-power electronic devices with strict power consumption requirements, such as portable devices, sensor modules, etc.

In general, 2SJ343-VB is suitable for circuits and modules that require P-Channel field-effect transistors, especially in some fields that have high requirements on power consumption, efficiency and power management.