2SJ211-T1B-A-VB is a P-Channel field effect transistor of VBsemi brand, using SOT23 package. The following are detailed parameter descriptions and application introductions:

- Voltage (Vds): -100V
- Current (Id): -1.5A
- On-resistance (RDS(ON)): 500mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -2.5V

Application introduction:
2SJ211-T1B-A-VB is suitable for various electronic devices and modules, especially in scenarios where P-Channel field effect transistors are required. Due to its performance characteristics, it can be widely used in the following fields:

1. **Power management module:** Due to its high voltage and current carrying capacity, 2SJ211-T1B-A-VB is very suitable for use in power management modules to achieve efficient power control and management.

2. **Power inverter:** In the power inverter, 2SJ211-T1B-A-VB can be used to control the current and voltage during the power inversion process to improve the inverter efficiency.

3. **Current control module:** Due to its low on-resistance and adjustable threshold voltage, 2SJ211-T1B-A-VB can be used in the current control module to achieve precise control of the current.

4. **Battery protection module:** Due to its high voltage characteristics, 2SJ211-T1B-A-VB is suitable for battery protection modules to ensure the safe operation of the battery under different working conditions.

5. **LED driver:** In the field of LED lighting, 2SJ211-T1B-A-VB can be used in LED driver modules to achieve efficient control and dimming of LEDs.

Overall, 2SJ211-T1B-A-VB can play an important role in various electronic modules that require P-Channel field effect transistors to improve system performance and efficiency.