**VBsemi 2SJ185-T2B-VB**

**Detailed parameter description:**
- **Package type:** SOT23
- **Channel type:** P—Channel
- **Channel voltage (VDS):** -60V
- **Current (ID):** -0.5A
- **On-resistance (RDS(ON)):** 3000mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1.87V

**Brand:** VBsemi

**Application introduction:**
VBsemi 2SJ185-T2B-VB is a P—Channel MOSFET suitable for a variety of electronic applications. The following are the main features and application areas of the device:

1. **Power management module:** 2SJ185-T2B-VB can be used in power management modules, especially in situations where P-Channel MOSFET is required for power switching, such as battery charging and discharging control.

2. **Low-power devices:** Due to its low on-resistance and low threshold voltage, the device is well suited for low-power devices, including portable electronic devices, sensors, and Internet of Things (IoT) terminals.

3. **Signal switch:** 2SJ185-T2B-VB can be used in signal switching circuits that require P-Channel MOSFET to provide reliable switching functions, such as signal switching applications in communication equipment.

4. **Power inverter:** The device is also suitable for small power inverter modules to meet the requirements of reverse polarity power inverters.

**Example: **
In the field of battery management, 2SJ185-T2B-VB can be used in battery charging and discharging control modules to ensure effective management of batteries and extend their life. In low-power devices, as part of low-power electronic devices, the device can be used to control the power switch of the device. In communication equipment, 2SJ185-T2B-VB can be used for signal switches to ensure the reliability of signal switching. At the same time, in small power inverter modules, the device can also provide reliable power inverter functions.