**2SJ185-T1B-VB Transistor**

- **Silkscreen:** VB264K
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23
- Polarity: P—Channel
- Maximum withstand voltage: -60V
- Maximum current: -0.5A
- On-resistance: RDS(ON)=3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth=-1.87V

- **Package:** SOT23

**Detailed parameter description:**
2SJ185-T1B-VB is a P—Channel field effect transistor in SOT23 package with the following characteristics: maximum withstand voltage of -60V and maximum current of -0.5A. The on-resistance is 3000mΩ (VGS=10V) and 3000mΩ (VGS=20V) at different gate-source voltages. The threshold voltage is -1.87V.

**Application Introduction:**
2SJ185-T1B-VB is suitable for a variety of electronic devices and modules, including but not limited to:
1. **Power Management Module:** Due to its P-Channel characteristics, it can be used in power management modules to achieve efficient current control and power consumption management.

2. **Signal Amplifier:** In the signal amplification circuit, it provides reliable signal amplification function through its low threshold voltage and moderate current capability.

3. **Battery Protection Circuit:** Suitable for battery protection circuit to achieve effective control of battery charging and discharging.

Please note that the above are only examples, and the actual application needs to be adjusted according to specific design requirements and circuit conditions.