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VBTA1220N 产品详细

产品简介:

VBTA1220N adopts a single N structure design and is suitable for circuits and modules with low power, high efficiency and high reliability requirements, such as signal amplifiers, low-power electronic equipment and smart sensor modules.
Has the following characteristics:
- High voltage withstand capability: VDS is 20V, suitable for application scenarios that need to withstand a certain high voltage.
- Wide input voltage range: VGS ±12V, able to cope with various input voltage conditions.
- Gate threshold voltage range: Vth is 0.5~1.5V, which can be adjusted according to specific needs.
- Higher on-resistance: Under different VGS, RDS(on) is 390mΩ (VGS=2.5V) and 270mΩ (VGS=4.5V) respectively, which is suitable for low-power applications within a certain range.
- Suitable for load current: ID is 0.85A, suitable for some scenarios with low power requirements.
- Using Trench technology, it has good performance stability and reliability.
- The package is SC75-3 for easy integration on the circuit board.

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产品参数:

Product model: VBTA1220N
Brand: VBsemi
parameter:
- Single N structure
- VDS(V): 20
- VGS(㊣V): 12
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 390
- RDS(on) VGS=4.5V(m次): 270
- ID (A): 0.85
- Technology: Trench
Package: SC75-3

领域和模块应用:

Application examples:
1. Signal amplifier: Since VBTA1220N has higher VDS and lower ID, it is suitable for circuit design in signal amplifiers to improve the efficiency and stability of signal amplification.
2. Low-power electronic equipment: For electronic equipment that requires low power consumption and high performance, VBTA1220N can be used to control circuits and power amplifiers to reduce energy consumption and improve the endurance of the equipment.
3. Smart sensor module: In the smart sensor module, VBTA1220N can be used to control the sensor circuit to achieve rapid response and precise control to environmental changes.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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