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VBQG8218 产品详细

产品简介:

This product is a single-channel P-type MOSFET with the following characteristics:
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.8V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 22mΩ; when VGS is 4.5V, the on-resistance is 18mΩ, with low on-resistance characteristics.
- Maximum current: ID can reach up to -10A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
- Package: DFN6 (2X2), suitable for layout design in limited space.

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产品参数:

Product model: VBQG8218
Brand: VBsemi
parameter:
-Single P
- VDS(V): -20
-VGS(㊣V): 20
- Vth(V): -0.8
- RDS(on) VGS=2.5V(m次): 22
- RDS(on) VGS=4.5V(m次): 18
- ID (A): -10
- Technology: Trench
Package: DFN6(2X2)

领域和模块应用:

This product is suitable for the following areas and modules:
1. Power management module: Due to its low on-resistance and reliable performance, it can be used in power switches and power regulators to improve system efficiency and stability.
2. Motor drive module: Able to withstand higher voltages and currents, suitable for applications such as DC motor drivers and electric vehicle controllers, providing reliable motor control.
3. LED light control module: By controlling the on and off states of MOSFET, the brightness adjustment and switch control of LED lights are realized, which is suitable for lighting system and display screen control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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