产品参数:
Product model: VBQG7322
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 27
- Drain-source on-resistance (m次) at VGS=10V: 23
- Maximum drain current (ID): 6A
- Technology: Trench (groove type)
Package: DFN6(2X2)
领域和模块应用:
for example:
1. **Mobile devices**: VBQG7322 can be used as a switch tube for the power management module in mobile devices to control the output and charging of battery power. Due to its small size and low power characteristics, it is suitable for the compact space and low power consumption requirements of mobile devices.
2. **Smart Home**: In smart home systems, VBQG7322 can be used as a switch tube for smart sockets and switch control modules to control the switches and power management of home appliances. Its small package and low power consumption improve the performance and stability of smart home systems.
3. **Sensor interface**: VBQG7322 can be used as a switch tube in the sensor interface circuit to control the data collection and signal transmission of the sensor. Due to its low power characteristics, it is suitable for sensor interface applications requiring long operation and low power consumption.
In summary, the VBQG7322 field effect transistor is suitable for small size and low power applications, such as applications in mobile devices, smart homes, and sensor interfaces.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性