产品参数：
Detailed parameter description:
- Product model: VBQG5325
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣30V, VGS=㊣20V
- Threshold voltage: Vth=1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 24m次 (N channel) / 40m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 18m次 (N channel) / 32m次 (P channel)
- Maximum drain current: ㊣7A
- Technology: Trench
- Package: DFN6(2X2)-B
领域和模块应用：
Examples of applicable fields and modules:
- Power management module: can be used for low-voltage power management and power switch control, suitable for mobile devices and consumer electronics.
- Automotive electronic modules: Suitable for driver and controller modules in automotive electronic systems, such as engine control units and power systems of electric vehicles.
- Industrial automation modules: Power switches and drive modules that can be used in industrial automation equipment and control systems, such as PLC controllers and factory automation equipment.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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