产品参数:
**VBsemi VBQG4338 dual P-type MOSFET**
- **Parameters:**
- Maximum drain-source voltage (VDS): -30V
- Standard gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 60
- Drain-source resistance (m次) at VGS=10V: 38
- Maximum drain current (ID): -5.4A
- Technology: Trench
- **Package:**
- DFN6(2X2)-B
领域和模块应用:
VBQG4338 is suitable for a variety of power supply and power control applications and has the following features:
1. **Portable Electronic Devices:** Due to its small package and low power consumption, VBQG4338 is very suitable for use as power control modules in portable electronic devices, such as smartphones, tablets, and portable audio equipment. For example, used as charging management and battery protection modules in smartphones.
2. **Power Management and DC-DC Converter:** VBQG4338 can be used as a power switch in switching power supplies and DC-DC converters to achieve efficient power management and power conversion. For example, used in power management modules in industrial automation equipment and communication base stations.
3. **Automotive electronic systems:** In automotive electronic systems, VBQG4338 can be used in power control modules such as engine control modules, body control modules and in-vehicle entertainment systems. Its high performance and reliability make it ideal for automotive electronic systems.
4. **LED lighting and lighting control:** VBQG4338 can be used as a power switch for LED drivers and lighting control modules to help realize efficient LED lighting systems and lighting products. For example, driver modules for LED lamps in indoor and outdoor lighting.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性