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VBQF5325 产品详细

产品简介:

1. Product introduction:
VBsemi's VBQF5325 is a dual N+P type MOSFET that uses Trench technology and has high performance and reliability. The product's drain-source voltage (VDS) is ±30V and is suitable for various power management and power control application scenarios. The package is DFN8(3X3)-B, easy to install and use.

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产品参数:

2. Detailed parameter description:
- Product model: VBQF5325
- Brand: VBsemi
- Type: Dual N+P type MOSFET
- Maximum drain-source voltage (VDS): ㊣30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.6V/-1.7V
- Drain-source resistance (m次) at VGS=4.5V: 17/45
- Drain-source resistance (m次) at VGS=10V: 13/40
- Maximum drain current (ID): 8A/-6A
- Technology: Trench
-Package: DFN8(3X3)-B

领域和模块应用:

Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power management: It can be used in power management modules such as switching power supplies and voltage regulators to provide reliable power control and regulation functions.
2. Electric vehicles: Applicable to battery management systems, drive control and other modules in electric vehicles to improve vehicle performance and driving experience.
3. Industrial control: It can be used in power control, motor control and other modules in industrial automation systems to improve production efficiency and stability.
4. LED lighting: Suitable for power switch components in LED lighting control circuits to realize light adjustment and control and improve energy utilization.

The above are some examples of applications of this product in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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