产品参数:
**VBsemi VBQF4338 dual P+P power MOSFET**
**Parameter Description:**
- **Brand:** VBsemi
- **Model:** VBQF4338
- **Package:** DFN8(3X3)-B
- **Dual P+P:** Double P+P type
- **Maximum Drain-Source Voltage (VDS):** -30V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** -1.7V
- **On-resistance (m次) when gate-source voltage is 4.5V: ** 60
- **On-resistance (m次) when gate-source voltage is 10V:** 38
- **Maximum Drain Current (ID):** -6.4A
- **Technology:** Trench
领域和模块应用:
**for example:**
1. **Electric vehicle battery management system:** The battery management system of electric vehicles requires reliable power switching devices to control the charge and discharge of the battery. The double P+P design of VBQF4338 makes it suitable for the charge and discharge control module in the electric vehicle battery management system, which can ensure the safe charge and discharge and long-term stable operation of the battery.
2. **Solar Inverter:** Solar inverter requires efficient power switching devices to convert the DC power collected by the solar panels into AC power. VBQF4338 is suitable for power switch modules in solar inverters, which can achieve efficient power conversion and stable power output.
3. **Industrial motor driver:** Industrial motor driver requires stable and reliable power switching devices to control the start, stop and speed adjustment of the motor. The dual P+P type design of VBQF4338 makes it suitable for power switching controllers in industrial motor drives, enabling precise motor control and efficient energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性