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VBQF3316G 产品详细

产品简介:

VBQF3316G is a half-bridge N+N type MOSFET. Features a maximum drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 28A, and a high drain-source resistance (RDS(on)). Manufactured using Trench technology and packaged in DFN8(3X3)-C.

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产品参数:

Product model: VBQF3316G
Brand: VBsemi
parameter:
- Type: Half-bridge N+N type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 22/45
- Drain-source resistance (m次) at VGS=10V: 16/40
- Drain current (ID): 28A
- Technology: Trench
Package: DFN8(3X3)-C

领域和模块应用:

This VBQF3316G product is suitable for the following fields and modules:
1. Motor drive: Due to its half-bridge structure and high drain current, it can be used to design motor drive modules, such as electric vehicle drivers, electric bicycle controllers and industrial motor drivers.
2. Inverter: Suitable for designing half-bridge inverter modules, such as solar inverters and AC power electronic inverters, to convert DC power to AC power or adjust the frequency and voltage of AC power.
3. Power module: Can be used to design half-bridge power modules, such as direct current-to-direct current (DC-DC) converters and alternating current-to-direct current (AC-DC) converters, to achieve high efficiency and stable power conversion.
4. Automotive electronics: Suitable for automotive electronics fields, such as vehicle chargers, electric vehicle battery management systems and vehicle power systems to provide reliable power control and regulation.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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