产品参数：
has the following parameters:
The maximum drain-source voltage (VDS) is -60V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -1.7V. When the gate-source voltage is 4.5V, the drain-source resistance is 29m次; when the gate-source voltage is 10V, the drain-source resistance is 21m次. Its maximum drain current (ID) is 36A, using trench technology (Trench).
This product is packaged in DFN8 (3X3).
领域和模块应用：
VBQF2625 transistor is suitable for a variety of fields and modules. For example,
In power management modules, it can be used in battery management systems, DC-DC converters and power switches.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for use in high-efficiency and high-performance power control applications. In automotive electronic modules, it can be used in electric vehicle motor control, light driving and battery management systems. Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
立即下载
中文
English
返回上级页面.png)
