产品参数:
**VBQG2317**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.7V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 20m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 17m次
- **ID (A):** Drain current: -10A
- **Technology:** Channel process
- **Package:** DFN6(2X2)
领域和模块应用:
**Applicable areas and module examples:**
1. **Battery management module:** VBQG2317 can be used in the battery overcharge and over-discharge protection circuit in the battery management module. Its low drain-source resistance and moderate drain current enable it to effectively control the battery's charge and discharge process and extend the battery's service life.
2. **Low-power electronic equipment:** In low-power electronic equipment, VBQG2317 can be used in power management circuits and switching power supply modules. Its low threshold voltage and low drain-source resistance enable efficient power conversion, reducing device energy consumption and heat generation.
3. **Medical device control module:** In the medical device control module, VBQG2317 can be used to control the power switch and drive circuit of medical equipment. Its stable performance and high drain current enable it to reliably drive various medical devices, ensuring the safe and stable operation of medical equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性