VBQF1615 is a single-channel N-channel field effect transistor with the following main parameters:
- **VDS(V)**: The nominal drain-source voltage is 60V, suitable for medium and low voltage circuit design.
- **VGS(±V)**: The nominal gate-source voltage is ±20V, which has a large voltage tolerance and provides good circuit flexibility.
- **Vth(V)**: The threshold voltage is 2.5V, indicating that the transistor begins to conduct at this voltage, which is suitable for a variety of application scenarios.
- **VGS=4.5V(mΩ)**: According to the standard test conditions, the on-resistance when VGS=4.5V is 13mΩ, and the on-resistance when VGS=10V is 10mΩ, which has lower on-resistance and can be realized Smaller conduction loss.
- **ID (A)**: Maximum drain current is 15A, suitable for medium current load applications.
- **Technology**: Made with Trench technology, it has high working stability and reliability.
- **Package**: Using DFN8 (3X3) package, small and lightweight, suitable for compact space applications.

VBQF1615 is suitable for applications requiring medium-power field effect transistors, such as power modules, drive modules, LED lighting modules and industrial control modules.