VBQF1302 - VBsemi MOS管制造商

VBQF1302 产品详细

描述
参数
应用
技术支持

产品简介：

This product is a single N-type MOSFET, suitable for circuits and modules requiring high performance switching

Its main parameters include:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 3mΩ;
- When the gate-source voltage is 10V, the on-resistance is 2mΩ;
- Maximum drain current (ID) is 70A;
- Made using Trench technology;
- Package is DFN8(3X3).

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产品参数：

parameter:
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 70
- Technology: Trench
Package: DFN8(3X3)

领域和模块应用：

This MOSFET is suitable for circuits and modules that require high performance switching, especially in the following areas and modules:
- Power Management Modules: Due to its low on-resistance and high drain-source voltage, it is suitable for power switches and current regulators in power management modules.
- Electric vehicle control modules: can be used in motor controllers, drives and battery management systems in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- LED lighting module: suitable for modules such as power switches, dimmers and current regulators in LED lighting.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBQF1302 产品详细

产品简介：

文件下载

下载PDF 文档

产品参数：

领域和模块应用：

技术支持：

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