MOSFET

您现在的位置 > 首页 > MOSFET

VBQF1252M 产品详细

产品简介:

The VBQF1252M is a single N-channel MOSFET with a rated drain-source voltage of up to 250V and a drain current of 10.3A. Features include a standard gate-source voltage of ±20V, a threshold voltage of 3.5V, and a drain-source resistance of 125 milliohms. The device uses Trench technology and is packaged as DFN8 (3X3).

文件下载

下载PDF 文档
立即下载

产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (miohms) at gate-source voltage 10V: 125
- Drain current (ID): 10.3A
- Technology: Trench
Package: DFN8(3X3)

领域和模块应用:

for example:
1. Power management module: Since the VBQF1252M has a high rated voltage and moderate drain current, it is suitable for various power management modules such as battery chargers and DC regulators. In the battery charger, it can be used as a power switching device in the charging circuit to achieve battery charging and current protection functions."
2. LED Driver: This MOSFET can be used in LED driver modules in LED lighting systems to achieve brightness adjustment and current control of LED lamps. Its moderate rated voltage and drain current make it a common power switching device in LED drivers.
3. Industrial control system: In industrial control systems, VBQF1252M can be used as a key component of industrial motor control modules, such as frequency converters and motor drivers. Its high rated voltage and stable performance ensure reliable operation and long-term stability of industrial control systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询