产品参数:
Product model: VBQF1102N
Brand: VBsemi
parameter:
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=10V: 17
- Maximum drain current (ID): 35.5A
- Technology: Channel
Package: DFN8(3X3)
领域和模块应用:
Example 1: Applicable to power management module
Since this transistor has a high drain-source voltage and drain current capacity, it is suitable for use in switching power supply circuits or voltage stabilizing circuits in power management modules. In these modules, it can provide reliable switching control and stable voltage output to meet the power needs of various electronic devices.
Example 2: Suitable for electric vehicle driver module
For electric vehicle drive modules, efficient power switching devices are needed to control the speed and steering of the electric motor. The VBQF1102N has low drain-source resistance and high drain current capacity, making it suitable for use as a power switching device in electric vehicle driver modules. It provides efficient power conversion and is stable under high voltage and high current conditions, ensuring the reliability and performance of electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性