产品参数:
parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 150
- Drain-source resistance (m次) at VGS=10V: 130
- Maximum drain current (ID): 4A
- Technology: Channel
Package: DFN8(3X3)
领域和模块应用:
Example 1: Applicable to power management module
Because VBQF1101M has high drain-source resistance and moderate drain current capacity, it is suitable for use as a power switching device in power management modules. In the power management module, it can be used in power switches, battery charge and discharge management, voltage regulators and other circuits to ensure stable power supply and efficient energy consumption management of electronic equipment.
Example 2: Applicable to LED lighting module
Because VBQF1101M has a small package and moderate drain current capacity, it is suitable for use as power switching devices in LED lighting modules. In the LED lighting drive circuit, VBQF1101M can be used as the switching element of the LED lamp bead to realize the brightness adjustment and switching control of the LED lighting fixtures, improving the efficiency and flexibility of the lighting system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性