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VBQE165R20S 产品详细

产品简介:

Product introduction:

VBsemi's VBQE165R20S is a single N-type MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as DFN8X8.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 160
- Maximum drain current (ID): 20A

领域和模块应用:

Examples of applicable fields and modules:

- Power converters: Due to its high voltage tolerance and low on-resistance, it is suitable for power conversion and current control in power converters, such as server power supplies and industrial power supplies.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as motor drivers and on-board chargers for electric vehicles.
- Solar inverter: In a solar inverter, it can be used as a switching tube to achieve power conversion and current control between solar panels and the grid.
- Industrial automation equipment: Suitable for power management and power control in industrial automation equipment, such as PLC, servo drives, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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