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VBQD3222U 产品详细

产品简介:

VBQD3222U is a dual N-type + N-type field effect transistor, suitable for a variety of application scenarios. Features include low threshold voltage, low drain-source on-resistance, and high drain-source voltage.

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产品参数:

parameter:
- Structure type: Double N type + N type
- Maximum drain-source voltage (VDS): 20V
- Maximum gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): 0.5~1.5V
- Drain-source on-resistance (RDS(on)) at VGS=2.5V: 28m次
- Drain-source on-resistance (RDS(on)) at VGS=4.5V: 22m次
- Maximum drain current (ID): 6A
- Technology: Trench
Package: DFN8(3X2)-B

领域和模块应用:

The following are examples of the application of this product in different fields and modules:"

1. Power management module:
In the power management module, VBQD3222U can be used as a key component of the switching power supply to achieve high-efficiency power conversion and energy-saving control. Its dual N-type and N-type structure enables it to control positive and negative voltages simultaneously, providing more flexible power regulation capabilities.

2. Electric vehicle module:
In electric vehicle modules, VBQD3222U can be used to drive motors and electronic control units in electric vehicle systems. Its high voltage and current capabilities enable it to withstand high power loads in electric vehicle systems and ensure system stability and safety.

3. Industrial control module:
Among industrial control modules, VBQD3222U can be used to control and drive various industrial equipment and automation systems. Its low drain-to-source on-resistance and high threshold voltage enable it to provide reliable performance and long-term stability in industrial environments.

4. Smart home module:
In smart home modules, VBQD3222U can be used to control home smart devices and security systems. Its small package and high performance make it ideal for use in smart home systems, providing reliable power management and control capabilities.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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