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VBQA3303G 产品详细

产品简介:

VBQA3303G is a half-bridge N+N field effect transistor with a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. When the gate-source voltage is 4.5V and 10V respectively, the drain-source resistance is 4mΩ and 3mΩ respectively, and the maximum drain current is 60A. This product uses trench technology and is packaged as DFN8(5X6)-C.

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产品参数:

parameter:
- Half-Bridge N+N (half-bridge N+N)
- VDS (drain-source voltage): 30V
- VGS (gate-source voltage): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 4
- Drain-source resistance (m次) at VGS=10V: 3
- Maximum drain current (ID): 60A
- Technology: Trench
Package: DFN8(5X6)-C

领域和模块应用:

Application introduction and examples:
VBQA3303G is suitable for power switch and half-bridge driver application scenarios, such as:
1. Electric vehicle module: VBQA3303G can be used as a motor driver for electric vehicles to control the motor rotation and speed of electric vehicles and improve the vehicle's power performance and energy efficiency.
2. Industrial control module: In the industrial automation control system, VBQA3303G can be used to control the start, stop and speed of industrial robots, conveyor belts and other equipment to improve the automation and production efficiency of the production line.
3. High-efficiency power supply module: VBQA3303G can be used in switching power supply modules to achieve high-efficiency power conversion. It can be used in data centers, communication base stations and other occasions that require stable power supply to improve the energy efficiency and reliability of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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